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| Datasheet File OCR Text: |
| NTE2902 N-Channel Silicon Junction Field Effect Transistor Description: The NTE2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier applications. Absolute Maximum Ratings: (Note 1) Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Note 1. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min -25 -2.0 24 Typ Max -1.0 -1.0 -6.5 60 1.0 Unit V nA A V mA V OFF Characteristics Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage V(BR)GSS IG = 1.0A, VDS = 0 IGSS VGS(off) IDSS VGS(f) VGS = 15V, VDS = 0 TA = +25C TA = +125C VDS = 10V, ID = 1nA VDS = 10V, VGS = 0, Note 2 VDS = 0, IG = 1mA ON Characteristics Zero-Gate Voltage Drain Current Gate-Source Forward Voltage Note 2. Pulse test: Pulse Width 300s, Duty Cycle 3%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Symbol Re(yis) Re(yos) gos Gpg Re(yfs) gfs Re(yig) gfg gog Cgd Cgs en VDS = 0, VGS = -10V, f = 1MHz Test Conditions f = 100MHz f = 100MHz f = 1kHz f = 100MHz f = 100MHz f = 1kHz f = 100MHz VDS = 10V, ID = 10mA, f = 1kHz Min 8000 Typ 0.5 0.25 16 12 12 150 150 1.8 4.3 10 Max 250 2.5 5.0 Unit mmhos mmhos mhos dB mmhos mmhos mhos mhos pF pF nV/Hz Small-Signal Characteristics Common- Source Input Conductance Common-Source Output Conductance Common-Gate Power Gain Common-Source Forward Transconductance Common-Gate Input Conductance Common-Gate Forward Transconductance Common-Gate Output Conductance Gate-Drain Capacitance Gate-Source Capacitance VDS = 10V, ID = 10mA 18000 mhos Functional Characteristics Equivalent Short-Circuit Input Noise Voltage VDS = 10V, ID = 10mA, f = 100Hz .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max GSD .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max |
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